BSH111 is an N-channel enhancement mode field-effect transistor produced by NXP Semiconductors, using TrenchMOS™ technology, with very fast switching speed, low threshold voltage and subminiature surface mount package. It can be used in battery management, high speed switch and logic level translator.
This document provides product specifications and characteristics for the Philips BSH111, an N-channel enhancement mode field-effect transistor. The device utilizes TrenchMOS™ technology within a subminiature SOT23 surface mount package.
Key features include very fast switching speeds, low threshold voltage, and suitability for applications such as battery management, high-speed switching, and logic level translation.
| Junction temperature | -65 °C to +150 °C |
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The device is available in a SOT23 subminiature surface mount package.
It is designed for battery management, high speed switching, and logic level translator applications.