Philips BSH114 N-Channel Enhancement Mode Field Effect Transistor Datasheet

BSH114 is an N-channel enhancement mode field effect transistor produced by NXP Semiconductors. It uses TrenchMOS™1 technology and has low on-state resistance, very fast switching speed and surface mount package. The applications include relay driver, DC/DC converter, general purpose switch, etc.


Philips BSH114 N-Channel Enhancement Mode Field Effect Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
13
File format
PDF
File size
104 KB
Published
09 July, 2012
Updated
01 October, 2023
MD5 checksum
B67BECC294A4F373ABE1CD3F35A36FAA

About this manual

The Philips BSH114 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. It is designed for applications such as relay drivers, DC to DC converters, and general-purpose switching. The device is available in a surface mount SOT23 package.

What's inside

  • Description
  • Features
  • Applications
  • Pinning information
  • Quick reference data
  • Limiting values
  • Thermal characteristics
  • Characteristics

Specifications

Junction temperature150 °C
Package typeSOT23

Frequently asked questions

What is the primary technology used in the BSH114?

The BSH114 uses TrenchMOS™ technology.

What are the typical applications for this transistor?

It is suitable for relay drivers, DC to DC converters, and general purpose switches.

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