BSH112 is a N-channel enhancement mode field-effect transistor produced by PHILIPS, using TrenchMOS technology, with very fast switching speed, logic level compatibility, subminiature surface mount package, gate-source ESD protection diodes and other features.
The document is a product specification datasheet for the Philips BSH112, an N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. It is available in a subminiature surface mount SOT23 package and features gate-source ESD protection diodes.
Key applications include relay drivers, high-speed line drivers, and logic level translators. The datasheet provides comprehensive technical data including quick reference parameters, limiting values, thermal characteristics, electrical characteristics, and typical performance curves.
| Junction temperature (Max) | 150 °C |
|---|---|
| Package type | SOT23 |
The device uses TrenchMOS™ technology.
It is suitable for relay drivers, high speed line drivers, and logic level translators.
The maximum operating junction temperature is 150 °C.