BSH104 is a N-channel enhancement mode MOS transistor produced by Philips Semiconductors. It has the characteristics of high speed switching, no secondary breakdown, direct interface to C-MOS, TTL, etc., and very low threshold. It can be widely used in power management, DC to DC converters, general purpose switches and battery powered applications.
The document is a technical datasheet for the Philips BSH104, an N-channel enhancement mode MOS transistor packaged in SOT23. It outlines features such as high-speed switching and direct interface compatibility with C-MOS and TTL logic.
The text details objective specifications including limiting values, thermal characteristics, and electrical parameters like breakdown voltage, threshold voltage, and capacitance. It also includes a simplified outline of the package dimensions and definitions for data sheet status.
| Gate-source voltage (DC) | - +8 V |
|---|---|
| Package type | SOT23 |
The maximum total power dissipation is 0.5 W when the temperature at the soldering point of the drain lead (Tg) is 80 °C.
The storage temperature ranges from -55 to +150 °C, and the operating junction temperature also ranges from -55 to +150 °C.
The maximum drain-source voltage (DC) is 12 V.