BSH107 is an N-channel enhancement type MOS transistor produced by Philips Semiconductors. This product has a very low threshold voltage and extremely fast switching speed, making it ideal for battery powered applications and high speed digital interfacing. BSH107 is supplied in the SOT457 miniature surface mounting package.
This document is a product specification datasheet for the Philips BSH107, an N-channel enhancement mode MOS transistor. The device is designed for battery-powered applications and high-speed digital interfacing due to its very low threshold voltage and fast switching capabilities. It is supplied in a subminiature surface-mount SOT457 package with six leads.
| Drain-source voltage | 20 V |
|---|---|
| Drain current (DC) | 1.75 A |
| Total power dissipation | 0.417 W |
| Storage & operating temperature | -55 to 150 °C |
| Package type | SOT457 |
The device is supplied in a subminiature surface-mounting SOT457 package.
The maximum DC drain current at 25°C is 1.75 A.