BSH108 is an N-channel enhancement mode field-effect transistor. It uses TrenchMOS™1 technology and has a very fast switching speed. It can be used for battery management, high speed switch, low power DC to DC converter and other applications.
This document is a product specification for the Philips BSH108, an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. The device is housed in a subminiature surface mount SOT23 package and features very fast switching capabilities compatible with logic levels.
The datasheet provides comprehensive technical data including quick reference parameters such as maximum drain-source voltage (30 V) and drain current (1.9 A). It details limiting values, thermal characteristics, static and dynamic electrical characteristics, and includes various graphs illustrating output, transfer, and safe operating area curves.
| Package type | SOT23 |
|---|---|
| Junction temperature (Max) | 150 °C |
The device uses TrenchMOS™ technology.
It is suitable for battery management, high speed switches, and low power DC to DC converters.