BSH103 is a N-channel enhancement mode MOS transistor, with low threshold, high-speed switching, no secondary breakdown, etc. It is mainly used in power management, DC to DC converters, battery-powered applications, glue-logic, interface between logic blocks and periphery, general purpose switch, etc.
This document is a product specification datasheet for the Philips BSH103, an N-channel enhancement mode MOS transistor packaged in SOT23. It provides comprehensive electrical characteristics, including limiting values, thermal characteristics, and switching times.
The maximum operating junction temperature is +150 °C.
The maximum total power dissipation is 0.5 W when the temperature is 80 °C.
The maximum drain current is 0.85 A when the temperature is 80 °C.
The maximum gate-source voltage is +8 V.