The BSH121 is a N-channel enhancement mode field-effect transistor manufactured by Philips Semiconductors. It uses TrenchMOS technology and features very fast switching, low threshold voltage and a small surface mount package. It can be used for battery management, high speed switching and logic level translation applications.
This document is a product specification for the Philips BSH121, an N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. The device is available in a subminiature surface mount SOT323 package and features very fast switching speeds along with a low threshold voltage.
| Junction temperature | 150 °C |
|---|---|
| Package type | SOT323 |
The device uses TrenchMOS™ technology.
It is suitable for battery management, high speed switching, and logic level translation.