This document describes the features and characteristics of the Philips Semiconductors P-channel enhancement mode BSH202 MOS transistor. The transistor has a low threshold voltage, fast switching speed, and logic level compatibility, making it ideal for battery-powered applications and high-speed digital interfacing.
This document is a product specification datasheet for the Philips BSH202, a P-channel enhancement mode MOS transistor. It is designed for battery-powered applications and high-speed digital interfacing due to its low threshold voltage and fast switching capabilities. The device is supplied in a subminiature SOT23 surface-mount package.
| Drain-source voltage | -30 V |
|---|---|
| Drain current (DC) | -0.52 A |
| Total power dissipation | 0.417 W |
| Storage & operating temperature | -55 to 150 °C |
| Thermal resistance junction to ambient | 300 K/W |
The maximum drain-source voltage is -30 V.
The maximum continuous drain current is -0.52 A when the temperature is 25°C.
The device can be stored or operated between -55°C and 150°C.