The BSH203 is a P-channel enhancement mode MOS transistor with very low threshold voltage and fast switching, making it ideal for battery powered applications and high-speed digital interfacing.
This document is a product specification datasheet for the Philips BSH203, a P-channel enhancement mode MOS transistor designed for battery-powered applications and high-speed digital interfacing. The device features a very low threshold voltage and fast switching capabilities.
The datasheet provides comprehensive technical data including limiting values, electrical characteristics such as drain-source breakdown voltage and on-state resistance, thermal resistances, and normalized power dissipation curves. It also includes mechanical dimensions for the SOT23 subminiature surface mount package.
| Drain-source voltage (VDS) | -30 V |
|---|---|
| Drain current (DC) | -0.47 A |
The storage and operating temperature range is from -55°C to 150°C.
Yes, it is described as having fast switching and being logic level compatible.