This document describes the Fairchild Semiconductor Corporation's FDB150N10 N-Channel PowerTrench® MOSFET. The product has a rated voltage of 100V, a rated current of 57A, and an on-state resistance of 15mΩ. It is produced using advanced PowerTrench process to achieve lower on-state resistance and superior switching performance. It is suitable for applications such as DC to DC converters and synchronous rectification.
This document provides design specifications for the Fairchild Semiconductor FDB150N10 N-Channel PowerTrench MOSFET. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for DC to DC converters and synchronous rectification applications.
The datasheet details maximum ratings, electrical characteristics, thermal properties, and typical performance curves including capacitance, breakdown voltage variation, and safe operating areas. It also includes mechanical dimensions for the D2-PAK package.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Continuous Drain Current (Tj = 25°C) | 57 A |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 1.13 °C/W |
The maximum continuous drain current is 57 A when the temperature is 25°C.
The maximum drain to source voltage rating is 100 V.
The operating and storage temperature range is from -55 to +150 °C.