Fairchild Semiconductor FDB082N15A N-Channel MOSFET Datasheet

This datasheet is for FDB082N15A N-Channel PowerTrench® MOSFET. It has RDS(on) = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A, fast switching speed, low gate charge, high performance trench technology, extremely low RDS(on), high power and current handling capability, and is RoHS compliant.

Brand: Fairchild
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 9
File format: PDF
File size: 943 KB
Published: 11 July, 2012
Updated: 01 October, 2023
MD5 checksum: B372D051E06E73D065E0BB674DCDEDA4
PDF: Fairchild Semiconductor FDB082N15A N-Channel MOSFET Datasheet PDF

About this manual

This document is a technical datasheet for the Fairchild Semiconductor FDB082N15A N-Channel PowerTrench MOSFET. The device features a maximum drain current of 105A and an on-state resistance (Rds(on)) of 8.2mΩ typical at Vgs=10V.

What's inside

Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Typical Performance Characteristics
Package Marking and Ordering Information

Specifications

Drain to Source Voltage (Vdss)	150 V
Continuous Drain Current (Ip)	105 A
Package Type	D2-PAK

Frequently asked questions

What is the maximum drain-to-source voltage rating?

The maximum drain-to-source voltage rating is 150 V.

What is the maximum operating and storage temperature range?

The operating and storage temperature range is -55 to +175 °C.

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