This document describes the features and characteristics of the UniFET TM FDB12N50F N-Channel MOSFET product produced by Fairchild Corporation, including low on-state resistance, low gate charge, fast switching speed, 100% avalanche tested, improved dv/dt capability, etc.
This document is a technical datasheet for the Fairchild Semiconductor FDB12N50F, an N-Channel enhancement mode power field effect transistor (MOSFET). The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for applications such as high efficiency switching mode power supplies and active power factor correction circuits.
| Drain to Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) | 11.5 A |
| Package Type | D2-PAK |
| Operating Temperature Range | -55 to +150 °C |
The operating and storage temperature range is from -55 to +150 °C.