This document is a technical datasheet for the Fairchild Semiconductor FDB14N30, an N-channel enhancement mode power field effect transistor. The device utilizes proprietary DMOS technology designed to minimize on-state resistance and provide superior switching performance.
Key specifications include a drain-source voltage rating of 300V, a continuous drain current of 14A at 25°C, and a static drain-source on-resistance (RDS(on)) of 0.29Ω. The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and mechanical dimensions for the D2-PAK package.
| Drain-Source Voltage (VDSS) | 300 V |
|---|---|
| Total Gate Charge (Qg) | Typical 18 nC |
| Reverse Transfer Capacitance (Crss) | Typical 17 pF |
| Operating Temperature Range | -55 to +150 °C |
Yes, the FDB14N30 is 100% avalanche tested.
The device operates and stores within a temperature range of -55 to +150 °C.
The device can withstand a single pulsed avalanche energy of 330 mJ.