This product is a N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, high energy pulse withstand capability, and is well suited for high efficiency switching mode power supplies and active power factor correction applications.
This document is a datasheet for the Fairchild Semiconductor FDB12N50U, an N-Channel enhancement mode power field effect transistor (MOSFET). The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for applications such as high-efficiency switching mode power supplies and active power factor correction.
| Drain to Source Voltage | 500 V |
|---|---|
| Pulsed Drain Current | 40 A |
| Power Dissipation | 165 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | D2-PAK |
The maximum continuous drain current is 10 A when the temperature is 25°C.
The device has a maximum drain to source voltage rating of 500 V.