This product is an N-channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. It has low on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This product is well suited for high efficient switched mode power supplies and active power factor correction.
This document is a datasheet for the Fairchild Semiconductor FDB12N50TM, an N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary UniFET technology, which is tailored to minimize on-state resistance and provide superior switching performance for high efficiency switched mode power supplies and active power factor correction applications.
The datasheet provides maximum ratings, electrical characteristics, and typical performance characteristics including capacitances, switching times, and thermal resistance. It also includes mechanical dimensions for the D2-PAK and SOT-23 packages and outlines the product status definitions and life support policy.
| Continuous Drain Current (Tc = 100°C) | 6.9 A |
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Yes, the device is RoHS compliant.
The device supports a maximum continuous drain current of 11.5 A when the temperature is 25°C.
This MOSFET can operate and be stored in temperatures ranging from -55 to +150 °C.
You must reduce the maximum power dissipation by 1.33 W for every degree Celsius above 25°C.