Fairchild Semiconductor FDB120N10 N-Channel MOSFET Datasheet

This document describes the features and characteristics of FDB120N10 N-Channel PowerTrench® MOSFET, including low on-state resistance, fast switching speed, low gate charge, and high power handling capability.

Brand: Fairchild
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 8
File format: PDF
File size: 503 KB
Published: 11 July, 2012
Updated: 29 September, 2023
MD5 checksum: 673067BAF0E963FC54C8909F80E3BBDB
PDF: Fairchild Semiconductor FDB120N10 N-Channel MOSFET Datasheet PDF

About this manual

This document is a datasheet for the Fairchild Semiconductor FDB120N10, an N-Channel PowerTrench MOSFET rated for 100V and 74A continuous drain current. It utilizes advanced PowerTrench technology to minimize on-state resistance while maintaining superior switching performance. The device is RoHS compliant and suitable for applications such as DC to DC converters and synchronous rectification.

What's inside

Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Typical Performance Characteristics
Test Circuits
Mechanical Dimensions
Package Marking
Ordering Information

Specifications

Drain to Source Voltage	100 V
Continuous Drain Current (25°C)	74 A
Operating Temperature Range	-55 to +175 °C

Frequently asked questions

What is the maximum drain current at 25°C?

The maximum continuous drain current at 25°C is 74 A.

Is the FDB120N10 RoHS compliant?

Yes, the device is RoHS compliant.

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