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This datasheet lists the characteristics of APT10035JFLL.

This document is about APT10035 product information, including characteristics, maximum ratings, static characteristics, etc.

This document provides information on the maximum ratings and technical specifications of the product, including voltage, current, power, etc. It also includes static electrical characteristics of the product, such as leakage current, gate-source voltage, and drain-source current.

This is a datasheet for APT10030L2VFR

APT1002RCN 1000V 5.5A 2.00Ω is a high voltage power MOSFET device produced by Advanced Power Technology. It has a maximum drain-source voltage of 1000V, a maximum continuous drain current of 5.5A, and a maximum drain-source on-state resistance of 2.00Ω.

This document provides detailed specifications of APT1002RBN and APT1002R4BN, including maximum voltage, current, power, temperature range, etc.

This datasheet is about the static electrical characteristics of APT10026RKVR.

This is the technical information of APT10026L2LL, including its maximum ratings and static electrical characteristics.

This document describes a power device with high voltage, high current, low resistance, and its static electrical characteristics and maximum ratings.

Query APT10026JNR suppliers

This document describes the features and parameters of N-Channel Enhancement Mode High Voltage Power MOSFETs. The product model is APT10026JN and the brand is Power MOS IV®. This MOSFET has a drain-source voltage of 1000V, a continuous drain current of 33A, and a drain-source resistance of 0.26Ω.

The document describes the features and characteristics of a product with model number APT10026JLL, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.

This document provides information about APT10026JFLL, including rated voltage, rated current, leakage current, switching speed, etc.

This is the datasheet of APT10025PVR, a high voltage N-channel enhancement mode power MOSFET. The product features low JFET effect, high junction temperature, small package and low on-resistance.

The document describes the features and characteristics of a product named APT10025JVR, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc. The product has a drain-source voltage of 1000V and a drain current of 34A.