The document describes the features and characteristics of a product named APT10025JVR, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc. The product has a drain-source voltage of 1000V and a drain current of 34A.
This document provides technical specifications and characteristics for the APT10025JVR, a high voltage N-Channel enhancement mode power MOSFET. The device features Advanced Power Technology's proprietary Power MOS V® technology to minimize the JFET effect and reduce on-resistance.
Key electrical ratings include a drain-source voltage of 1000 Volts and a continuous drain current of 34 Amps at 25°C. The datasheet details static electrical characteristics, dynamic parameters such as capacitance and gate charge, thermal properties, and package dimensions for the SOT-227 (ISOTOP®) package.
| Total Power Dissipation (Tg = 25°C) | 700 Watts |
|---|---|
| Package Type | SOT-227 (ISOTOP®) |
The device supports a continuous drain current of 34 Amps when the temperature is 25°C.
The total power dissipation is rated at 700 Watts when the temperature is 25°C.
The maximum torque for device mounting screws and electrical terminations is 13 lbsin.