Advanced Power Technology APT10026JNR N-Channel MOSFET Datasheet

Query APT10026JNR suppliers

Brand: Advanced
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 2
File format: PDF
File size: 95 KB
Published: 11 July, 2012
Updated: 30 September, 2023
MD5 checksum: FAB821F01DE274E82080FFFD5F31E02F
PDF: Advanced Power Technology APT10026JNR N-Channel MOSFET Datasheet PDF

About this manual

This document is a technical datasheet for the Advanced Power Technology APT10026JNR, an N-channel enhancement mode low voltage power MOSFET. The device features an avalanche-rated ISOTOP package and is UL Recognized with File No. E145592.

What's inside

Maximum Ratings
Static Electrical Characteristics
Thermal Characteristics
Dynamic Characteristics
Source-Drain Diode Ratings
Package Characteristics
Package Outline

Specifications

Drain-Source Voltage	1000 Volts
Continuous Drain Current	33 Amps
Pulsed Drain Current	132 Amps
Total Power Dissipation	690 Watts
Operating Junction Temperature Range	-55 to 150 °C
Drain-Source On-State Resistance	0.26 Ohms
Junction to Case Thermal Resistance	0.18 °C/W

Frequently asked questions

What is the typical on-state resistance?

The typical drain-source on-state resistance (Rds(on)) for the APT10026JNR is 0.26 Ohms.

What package type does this MOSFET use?

The device uses the ISOTOP® SAA package.

Download PDF (95 KB)