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This data table is for the static electrical characteristics of APT10025JVFR

The document describes a power MOSFET product with high voltage, high current, and low resistance characteristics. It has a breakdown voltage of up to 1000V between drain and source, a maximum on-state drain current of 34A, and an on-state drain-source resistance of 0.25Ω. The product also has low zero gate voltage and drain current, as well as a high gate-source threshold voltage.

This file is about the technical information of APT10021JLL, including its maximum ratings and static electrical characteristics

The document describes a product with the following features and characteristics: 1. Drain-source breakdown voltage; 2. On-state drain current; 3. Drain-source on-state resistance; 4. Zero gate voltage drain current; 5. Gate-source leakage current; 6. Gate threshold voltage.

This is a datasheet for the APT1001RSVR Schottky diode. The maximum voltage for this diode is 1000V, the maximum current is 11A, and the maximum resistance is 1.000Ω.

APT1001RBVR is a high voltage N-channel enhancement mode power MOSFET from Power MOS V® series. It features low voltage drop and small package.

This datasheet is for the APT1001RBN. It contains information on the voltage, current, and other parameters of the product, as well as maximum operating temperature.

The document describes the features and characteristics of a N-channel enhancement mode power MOSFET product, including its voltage, current, resistance, temperature characteristics, and thermal characteristics.

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This document describes the features and characteristics of the TO-258 model product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.

The document provides information about APT1001R1HN suppliers and describes the features and characteristics of the product.

This document is the datasheet of APT1001R1BVFR

APT1001R1BN and APT1001R3BN are N-channel enhancement MOSFETs with a rated drain-source voltage of 1000V, continuous drain current of 10.5A and 10.0A, and drain-source resistance of 1.10Ω and 1.30Ω.

This data sheet is for APT1001R1AVR's characteristic parameters, including rated voltage, rated current, switching time, switching frequency, etc.