This document describes the features and parameters of N-Channel Enhancement Mode High Voltage Power MOSFETs. The product model is APT10026JN and the brand is Power MOS IV®. This MOSFET has a drain-source voltage of 1000V, a continuous drain current of 33A, and a drain-source resistance of 0.26Ω.
This document is a datasheet for the Advanced Power Technology APT10026JN, an N-channel enhancement mode high voltage power MOSFET. The device is rated for a maximum drain-source voltage of 1000 volts and a continuous drain current of 33 amps at 25°C. It is housed in a single die ISOTOP package and is UL Recognized with File No. E145592.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 33 Amps |
| Pulsed Drain Current | 132 Amps |
| Gate-Source Voltage | +30 Volts |
| Total Power Dissipation | 690 Watts |
| Drain-Source On-State Resistance | 0.26 Ohms |
| Operating Junction Temperature Range | -55 to 150 °C |
| Package Type | SOT-227 (ISOTOP®) |
The maximum drain-source voltage is 1000 Volts.
The continuous drain current is 33 Amps at 25°C.