Advanced Power Technology APT10026JLL Power MOSFET Datasheet

The document describes the features and characteristics of a product with model number APT10026JLL, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.


Advanced Power Technology APT10026JLL Power MOSFET Datasheet - cover page
Brand
Advanced
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
70 KB
Published
11 July, 2012
Updated
29 September, 2023
MD5 checksum
80FC2B414D28322528104F5FB92C5BFF

About this manual

This document is a datasheet for the Advanced Power Technology APT10026JLL, a 1000V 30A N-Channel enhancement mode Power MOSFET. The device utilizes the company's Power MOS 7™ technology to achieve low conduction and switching losses with exceptionally fast switching speeds.

What's inside

  • Maximum Ratings
  • Static Electrical Characteristics
  • Dynamic Characteristics
  • Source-Drain Diode Ratings
  • Thermal Characteristics
  • Package Outline

Specifications

Operating Junction Temperature Range-55 to 150 C
Package TypeSOT-227

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at 25°C?

The device supports a continuous drain current of 30 Amps when the junction temperature is 25°C.

What is the maximum total power dissipation at a case temperature of 25°C?

The APT10026JLL can dissipate up to 595 Watts when the case temperature is maintained at 25°C.

What are the operating and storage junction temperature limits?

The device operates and stores within a junction temperature range of -55 to 150 C.

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