This is the datasheet of APT10025PVR, a high voltage N-channel enhancement mode power MOSFET. The product features low JFET effect, high junction temperature, small package and low on-resistance.
This document is a preliminary datasheet for the APT10025PVR, a high voltage N-Channel enhancement mode power MOSFET from Advanced Power Technology. The device utilizes new generation technology to minimize the JFET effect, increase packing density, and reduce on-resistance. It is designed for various power electronic applications and features optimized gate layout for faster switching speeds. This manual is written in Chinese.
| Drain-Source Voltage | 1000V |
|---|---|
| Continuous Drain Current | 33A |
| On-State Drain Current | 33A |
| Drain-Source On-State Resistance | 0.250 Ω |
| Input Capacitance | 15000 pF |
| Output Capacitance | 1360 pF |
| Reverse Transfer Capacitance | 710 pF |
| Junction to Case Thermal Resistance | 0.20 °C/W |
The maximum continuous drain current is 33 amps.