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The ER-650 series is a value-priced register from CRS, with features including multi-line backlit operator screen, RS-232C ports, multiple printing options and spill-resistant keyboard.
APT100GF60JU3 is a NPT IGBT device produced by APT company. Its maximum collector-emitter breakdown voltage is 600V, continuous collector current is 100A, and maximum power dissipation is 416W.
APT100GF60JRD 600V 140A is a G E E C Fast IGBT™ series product, using non-punch through technology, with low voltage drop, high frequency switching, low tail current, ultra low leakage current, RBSOA and SCSOA.
The document describes the features and characteristics of a product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, and gate-source leakage current.
The document describes the features and test conditions of a product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.
APT10088HVR is a N-channel enhancement mode power MOSFET with a 1000V breakdown voltage and a maximum continuous current of 11A. This product uses Power MOS V technology to minimize JFET effect, increase packing density and reduce on-resistance.
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
APT10086BVFR is a high voltage N-channel enhancement mode power MOSFET produced by ON Semiconductor. It has low voltage drop, fast recovery body diode, 100% avalanche testing and other features.
This document is the datasheet of APT10086, which introduces the static electrical characteristics, maximum ratings, repetitive non-repetitive surge current, repetitive surge energy and single pulse surge energy of the product.
