This document provides information about APT10026JFLL, including rated voltage, rated current, leakage current, switching speed, etc.
This document is a technical datasheet for the APT10026JFLL Power MOSFET manufactured by Advanced Power Technology. The device is described as part of the Power MOS 7™ series, featuring low loss and high voltage capabilities with an exceptionally fast switching speed due to a patented metal gate structure.
The datasheet provides comprehensive electrical specifications including maximum ratings for drain-source voltage (1000V) and continuous drain current (30A). It details static characteristics such as on-state resistance (typical 0.26 Ohms), threshold voltage, and leakage currents, alongside dynamic parameters like input capacitance and gate charge. Additionally, it covers the source-drain body diode ratings and thermal characteristics for junction-to-case and junction-to-ambient resistances.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 30 Amps |
| Total Power Dissipation | 595 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Package Type | SOT-227 |
The operating and storage junction temperature range extends from -55°C to +150°C.
The total power dissipation is rated at 595 Watts when the case temperature is maintained at 25°C.
The device can operate and store within a temperature range of -55 to 150 C.