Industrial

This document describes the features and characteristics of the FDP5N50F / FDPF5N50FT N-Channel MOSFET product released in May 2012, including a drain-to-source voltage of 500V, a drain current of 4.5A, and an on-state resistance of 1.55 ohms.

FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET is a 500V, 4.2A, 1.75Ω product with RDS(on) = 1.57Ω (Typ.) @ VGS = 10V, ID = 2.1A, Low Gate Charge (Typ. 9nC), Low Crss (Typ. 4pF), Fast Switching, 100% Avalanche Tested, Improved dv/dt Capability, ESD Improved Capability, RoHS Compliant features.

FDP5N50NZU/FDPF5N50NZU N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. Product features include: RDS(on) = 1.7Ω (Typ.)@ VGS = 10V, ID = 1.95A, low gate charge (Typ. 9nC), low Crss (Typ. 4pF), fast switching, 100% avalanche tested, improved dv/dt capability, improved ESD capability, RoHS compliant.

FDP5N50 / FDPF5N50T is an N-Channel MOSFET with a voltage of 500V, a current of 5A, and an RDS(on) of 1.4Ω. It has low gate charge and low Crss, with fast switching speed and improved dv/dt capability. It is suitable for high efficient switched mode power supplies and active power factor correction.

FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. Its features are RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A, low gate charge ( Typ. 11nC), low Crss ( Typ. 5pF), fast switching, 100% avalanche tested, improved dv/dt capability and RoHS compliant.

The FDPF680N10T is an N-channel PowerTrench® MOSFET with a drain-to-source voltage of 100V, a drain current of 12A, and an on-state resistance of 68mΩ. It features fast switching speed, low gate charge, and high-performance trench technology for extremely low on-state resistance. It has high power and current handling capability and is suitable for DC to AC converters/synchronous rectification.

This document describes the features and characteristics of FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, including RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, etc.

FDP8N50NZF/FDPF8N50NZF N-Channel MOSFET is produced by Fairchild using its proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, high energy pulse, and is suitable for high-efficiency switching power supplies and active power factor correction.

FDP8N50NZU / FDPF8N50NZU N-Channel MOSFET is a high-performance power field-effect transistor produced by Fairchild Semiconductor Corporation. The device has low on-state resistance, low gate capacitance and fast switching characteristics, and is suitable for applications such as high-efficiency switching mode power supplies and active power factor correction.

FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor manufactured by Fairchild Semiconductor Corporation. This product has the following features: RDS(on)=1.15mΩ (Typ.) @ VGS=10V, ID=3.25A; Low gate charge (Typ. 20nC); Low Crss (Typ. 10pF); Fast switching; 100% avalanche tested; Improved dv/dt capability; RoHS compliant.

FDQ7236AS is a dual-channel power MOSFET from Fairchild. It features low conduction and switching losses.

FDN5618P is a P-channel MOSFET produced by Fairchild, with a rated voltage of 60V, a drain current of -1.25A, a fast switching speed and low RDS(ON), suitable for power management, DC-DC converters and load switches.

This document introduces the FDN5630 model of N-Channel MOSFET product. This product uses Fairchild's PowerTrench technology, which has low RDS(ON) and fast switching characteristics, suitable for high-frequency DC/DC converters and motor drive applications.