This document describes a power device with high voltage, high current, low resistance, and its static electrical characteristics and maximum ratings.
This document is a datasheet for the Advanced APT10026L2FLL, a low loss, high voltage N-Channel enhancement mode power MOSFET. The device features Advanced's patented metal gate structure to combine lower conduction and switching losses with fast switching speeds.
The datasheet provides maximum ratings, static electrical characteristics, dynamic characteristics, and source-drain diode ratings. It also includes thermal characteristics and the mechanical outline for the TO-264 MAX (L2) package.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Pulsed Drain Current | 152 Amps |
| Operating Junction Temperature Range | -55 to 150 C |
The device uses the TO-264 MAX (L2) package.
Yes, the devices are sensitive to electrostatic discharge and proper handling procedures should be followed.