The FDT86102LZ is a N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor. It has a maximum rDS(on) of 28 mΩ, a maximum HBM ESD protection voltage of 6 kV, very low Qg and Qgd, fast switching speed, and has been through 100% UIL testing and is RoHS compliant.
This document is a datasheet for the Fairchild Semiconductor FDT86102LZ, an N-Channel PowerTrench MOSFET. The device is designed to minimize on-state and switching losses while providing excellent ESD protection. It is suitable for applications such as DC-DC conversion, inverters, and synchronous rectification.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | ±20 V |
| Continuous Drain Current | 6.6 A |
| Maximum rDS(on) at VGS = 10 V | 28 mΩ |
| Maximum rDS(on) at VGS = 4.5 V | 38 mΩ |
| HBM ESD protection level | > 6 kV typical |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
The maximum continuous drain current is 6.6 A.
The maximum drain to source voltage is 100 V.
The maximum on-resistance is 28 mΩ at VGS = 10 V.
Typical applications include DC-DC conversion, inverters, and synchronous rectification.