This product is a N-channel enhancement mode power field effect transistor, which features extremely low RDS(ON), high power and current handling capability, widely used in low voltage, low current applications such as notebook computer power management, battery powered circuits and DC motor control.
This document is a technical datasheet for the Fairchild Semiconductor FDT457N, an N-Channel Enhancement Mode Field Effect Transistor. The device utilizes high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for low voltage, low current applications such as notebook computer power management, battery-powered circuits, and DC motor control.
| Drain-Source Voltage (Voss) | 30 V |
|---|---|
| Maximum Power Dissipation | 3 W |
| Operating Temperature Range | -65 to 150 °C |
| Thermal Resistance, Junction-to-Ambient | 42 °C/W |
This product is well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
The maximum continuous drain current is 5 A when mounted on a 1 in² pad of 20% Cu.
The device operates and stores within a temperature range of -65 to 150 °C.