The FDT434P is a P-channel 2.5V specified PowerTrench MOSFET with superior switching performance, produced using Fairchild Semiconductor's advanced PowerTrench process specifically tailored to minimize on-state resistance and yet maintain low gate charge.
This document is a datasheet for the Fairchild Semiconductor FDT434P, a P-Channel MOSFET designed using the PowerTrench process. It is specified for a 2.5V gate threshold voltage and is intended for applications such as low dropout regulators, DC/DC converters, load switches, and motor driving. The device is available in a widely used surface mount package, specifically the SOT-223.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal characteristics, and typical performance curves. Key specifications include a drain-source voltage of -20V, a continuous drain current of -6A, and a typical on-state resistance of 0.050 Ohms. It also details switching characteristics, capacitance values, and the maximum safe operating area.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Continuous Drain Current | -6 A |
| Pulsed Drain Current | -30 A |
| Power Dissipation (Single Operation) | 3 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 42 °C/W |
| Thermal Resistance (Junction-to-Case) | 12 °C/W |
| On-Resistance (Typical) | 0.050 Ohms |
| Package Type | SOT-223 |
The typical on-state resistance is 0.050 Ohms at a drain current of -6A and a gate-source voltage of -4.5V.
It is suitable for low dropout regulators, DC/DC converters, load switches, and motor driving applications.
The maximum continuous drain current is -6A.