The FDT86256 N-Channel PowerTrench® MOSFET is a high-performance MOSFET product with low rDS(on), fast switching speed, RoHS compliance and other features. It is suitable for DC-DC conversion, inverter, synchronous rectifier and other applications.
This document provides a comprehensive technical overview of the FDT86256 N-Channel PowerTrench MOSFET. It highlights key features such as a maximum on-resistance of 845 mΩ at VGS = 10 V and ID = 1.2 A, along with very low Qg and Qgd compared to competing trench technologies. The device is designed for applications including DC-DC conversion, inverters, and synchronous rectification.
| Drain to Source Voltage | 150 V |
|---|---|
| Gate to Source Voltage | ±20 V |
| Continuous Drain Current (Package limited) | 3 A |
| Continuous Drain Current (Silicon limited) | 2.5 A |
| Continuous Drain Current (Ambient) | 1.2 A |
| Pulsed Drain Current | 2 A |
| Single Pulse Avalanche Energy | 1 mJ |
| Power Dissipation (TC = 25 °C) | 10 W |
| Power Dissipation (TA = 25 °C) | 2.3 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 12 °C/W |
| Thermal Resistance, Junction to Ambient | 55 °C/W |
| Package Type | SOT-223 |
| Max rDS(on) at VGS = 10 V, ID = 1.2 A | 845 mΩ |
The device is suitable for DC-DC conversion, inverters, and synchronous rectifier applications.
The maximum on-resistance is 845 mΩ at VGS = 10 V and ID = 1.2 A.
Yes, the device is RoHS compliant.
The FDT86256 is available in the SOT-223 package.