FDT439N is a 30 V low power N-channel MOSFET.
The FDT439N is an N-channel enhancement mode field effect transistor produced using Fairchild Semiconductor's proprietary high cell density DMOS technology. It is designed to minimize on-state resistance and provide superior switching performance, making it well-suited for low voltage, low current applications such as notebook computer power management, battery-powered circuits, and DC motor control.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Pulsed Drain Current | 20 A |
| Operating Junction Temperature Range | -55 to +150 °C |
The device is available in a widely used surface mount package, specifically the sot-223.