FDT86244 N-Channel Power Trench® MOSFET is produced by Fairchild Semiconductor and has extremely low rDS(on), high power and current handling capability. It can be widely used in load switch and primary switch applications.
This document is a datasheet for the Fairchild FDT86244 N-Channel PowerTrench MOSFET. It describes a device produced using Fairchild Semiconductor's advanced PowerTrench process, optimized for low on-resistance and switching performance. The component is designed for applications such as load switches and primary switches.
| Drain to Source Voltage | 150 V |
|---|---|
| Drain Current - Continuous | 2.8 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 12 °C/W |
| Thermal Resistance, Junction to Ambient | 55 °C/W |
| Package Type | SOT-223 |
| Max rDS(on) at VGS = 10 V | 128 mΩ |
The device is suitable for use as a load switch or a primary switch.
Yes, the device is RoHS compliant.
The maximum continuous drain current is 2.8 A.