Industrial

This document describes the characteristics and features of Vishay Siliconix SPICE Device Model 2N7002K N-Channel 60-V (D-S) MOSFET, including N-Channel Vertical DMOS structure, Level 3 MOS model, suitable for both linear and switching applications, wide temperature range, etc. It also introduces the principles of the subcircuit model and the parameter optimization method for this device.

The FDZ197PZ is a P-channel power MOSFET designed using the 1.5V PowerTrench process and WL-CSP packaging technology. It features low RDS(on), small PCB footprint, ultra-thin packaging, low gate charge, etc. It is suitable for applications such as battery management, load switches, and battery protection.

2N7002F is an N-channel enhancement mode field-effect transistor that uses TrenchMOS™ technology. It is designed for medium-speed switching applications. The transistor features TrenchMOS™ technology, which provides very fast switching, logic level compatibility, and a subminiature surface mount package.

The FDZ193P is a Fairchild P-Channel 1.7V PowerTrench® WL-CSP MOSFET with a maximum RDS(on) of 90 mΩ @VGS=-4.5V, ID=-1A. It occupies only 1.5 mm2 of PCB area and is less than 0.65 mm thick when mounted to a PCB. It is RoHS compliant.

The FDZ192NZ is a N-channel 1.5V PowerTrench® thin WL-CSP MOSFET designed by Fairchild Semiconductor Corporation. The device features an extremely low RDS(on), and can operate in a voltage range of 1.5V to 20V with a maximum current of 5.3A.

FDZ191P P-Channel 1.5V PowerTrench® WL-CSP MOSFET features a maximum RDS(on) of 85 mΩ, occupies only 1.5 mm2 of PCB area, is less than 0.65 mm in height when mounted to PCB, and is RoHS compliant. It is ideal for battery management, load switch, and battery protection applications.

This document describes the features and characteristics of the FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET, including maximum on-resistance, small PCB footprint, ultra-thin package, high power and current handling capability, etc.

FDY4000CZ is a N-P channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It has a low resistance characteristic and is suitable for power supply conversion circuits, load/power switching and other applications.

The document describes an N-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOS™ technology and packaged in a plastic package. The product features logic level threshold compatibility, very fast switching, and is suitable for applications such as logic level translators and high-speed line drivers.

This document describes the features and characteristics of the FDY301NZ single-channel MOSFET. It is designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. Its applications include Li-Ion battery packs. The main features include a current of 200mA, 20V and a resistance of 5Ω @ VGS = 4.5V, 7Ω @ VGS = 2.5V. In addition, it also has an ESD protection diode and is RoHS compliant.

2N7002DW is a dual N-channel enhancement mode field effect transistor with features such as low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

The FDY300NZ is a N-channel MOSFET from Fairchild Semiconductor that features a very low RDS(ON) @ VGS = 2.5v and is suitable for use in Li-Ion battery packs and other applications.

This is the datasheet of FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET from Fairchild Semiconductor Corporation. It features 600 mA, 20 V RDS(ON) = 700 m��@ VGS = 4.5 V RDS(ON) = 850 m� @ VGS = 2.5 V, ESD protection diode and RoHS compliance.

The 2N7002CSM is an N-channel enhancement mode MOS transistor produced by Semelab. It has a maximum breakdown voltage of 60V and a drain-source on-resistance of 7.5 ohms. The maximum operating temperature is 150°C.