FDT3N40 400V N-Channel MOSFET is a high-performance MOSFET device with the following features: 2A rated current, 400V rated voltage, 3.4 Ohm on-state resistance, 4.5 nC gate charge, 3.7 pF drain-source capacitance, fast switching speed, 100% avalanche tested, improved dv/dt capability.
This document is a datasheet for the Fairchild Semiconductor FDT3N40, an N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well suited for high efficient switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (25°C) | 2.0 A |
| Continuous Drain Current (100°C) | 1.2 A |
| Pulsed Drain Current | 8.0 A |
| Package Type | SOT-223 |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Case-to-Sink) | 60 °C/W |
| Gate Threshold Voltage | 3.0 - 5.0 V |
| Total Gate Charge | 4.5 nC (Typ) |