This document describes the features and absolute maximum ratings of the FDT459N N-Channel Enhancement Mode Field Effect Transistor released in March 1998. The transistor is produced using Fairchild's high cell density DMOS technology, which provides extremely low on-state resistance and superior switching performance. It is well-suited for low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
This document describes the Fairchild FDT459N, an N-Channel enhancement mode power field effect transistor produced using proprietary DMOS technology. It is designed for low voltage, low current applications such as notebook computer power management, battery-powered circuits, and DC motor control.
The datasheet provides absolute maximum ratings, electrical characteristics including on-resistance and switching times, typical performance curves, and thermal resistance data for various package configurations.
| Drain-Source Voltage (V_DSS) | 30 V |
|---|---|
| Static Drain-Source On-Resistance (R_DS(on)) | 0.0352 Ohm @ V_GS = 10V |
| Operating Temperature Range | -55 to 150 °C |
The device supports a maximum continuous drain current of 6.5 A and a maximum power dissipation of 3 W.
The device operates within a temperature range from -55 to 150 °C.
The maximum rated drain-source voltage for this transistor is 30 V.