The FDV301N is a low-voltage logic level enhancement mode field effect transistor from Fairchild that is used as a replacement for digital transistors. The device is manufactured using a proprietary, high-density DMOS process that results in a very low on-state resistance. The device does not require bias resistors, making it a suitable replacement for multiple digital transistors with different bias resistor values.
This document is a datasheet for the FDV301N, an N-Channel logic level enhancement mode field effect transistor produced using Fairchild's proprietary DMOS technology. The device is designed for low voltage applications as a replacement for digital transistors, eliminating the need for bias resistors.
| Drain-Source Voltage | 25 V |
|---|---|
| Continuous Drain/Output Current | 0.22 A |
| Peak Drain/Output Current | 0.5 A |
| Maximum Power Dissipation | 0.35 W |
| Operating and Storage Temperature Range | -55 to 150 °C |
| ESD Rating (Human Body Model) | 6.0 kV |
| Thermal Resistance, Junction-to-Ambient | 357 °C/W |
The gate threshold voltage ranges from 0.70 V to 1.06 V.
The static drain-source on-resistance is between 3.8 Ω and 5 Ω at Vgs=2.7V and Id=0.2A.
The maximum gate-source voltage is 8 V.