FDT86246 N-Channel Power Trench® MOSFET is a high-performance, low-resistance, high-power and high-current handling capability N-channel MOSFET. It is produced using Fairchild Semiconductor's advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
This document is a technical datasheet for the Fairchild Semiconductor FDT86246 N-Channel Power Trench MOSFET. The device utilizes advanced Power Trench technology to achieve low on-resistance and high power handling capabilities in an SOT-223 surface mount package.
The datasheet provides maximum ratings, electrical characteristics including breakdown voltage and switching parameters, and typical characteristic curves for drain current, on-resistance, gate charge, and capacitance under various operating conditions.
| Drain to Source Voltage (VDS) | 150 V |
|---|---|
| Gate to Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) | 2 A |
| Pulsed Drain Current (ID) | 8 A |
| Package Type | SOT-223 |
| Max rDS(on) at VGS = 10V, ID = 2A | 236 mΩ |
| Power Dissipation (Note 1a) | 2.2 W |
The maximum continuous drain current rating is 2 A.
Yes, the device is stated to be RoHS Compliant.
The part number indicates it uses an SOT-223 surface mount package.