FDT86106LZ N-Channel PowerTrench® MOSFET is a N-Channel logic Level MOSFET produced by Fairchild Semiconductor Corporation. It uses the company's advanced Power Trench® process to minimize on-state resistance while maintaining superior switching performance. The device has a continuous current of 3.2 A and a drain-source voltage of 100 V, making it ideal for applications such as DC-DC conversion.
This document is a technical datasheet for the Fairchild Semiconductor FDT86106LZ, an N-Channel logic level MOSFET produced using the advanced Power Trench process. The device features a surface mount SOT-223 package and includes G-S zener protection to enhance ESD voltage levels.
The datasheet provides comprehensive electrical characteristics, including maximum ratings for drain-to-source voltage (100 V) and continuous drain current (3.2 A). It details thermal resistance values, capacitance parameters, switching times, and typical performance curves such as on-resistance versus junction temperature.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Continuous Drain Current | 3.2 A |
| Power Dissipation (Ta = 25°C) | 2.2 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 12 °C/W |
The device supports a maximum continuous drain current of 3.2 A.
It has a power dissipation rating of 2.2 W when the ambient temperature is 25°C.
The component can operate and store within a junction temperature range of -55 to +150 °C.