MMBT2222AT is a NPN epitaxial silicon transistor produced by Fairchild Semiconductor Corporation. It is a general purpose amplifier transistor and is suitable for all types of ultra-small surface mount packages. It can also be used for general switching and amplification applications.
This document provides technical specifications for the MMBT2222AT, a general-purpose NPN epitaxial silicon transistor designed for amplifier and switching applications. It is available in an ultra-small surface mount package suitable for SMT technology.
The datasheet lists absolute maximum ratings, electrical characteristics such as current gain and saturation voltage, thermal characteristics, and typical performance curves. It also includes package dimensions for the SOT-523F case and trademark information.
| Collector-Base Voltage | 75 V |
|---|---|
| Collector-Emitter Voltage | 40 V |
| Emitter-Base Voltage | 6 V |
| Collector Current | 600 mA |
| Junction Temperature | 150 °C |
| Storage Temperature Range | -55 ~ 150 °C |
| Collector Power Dissipation | 250 mW |
| Thermal Resistance, Junction to Ambient | 500 °C/W |
| Package Type | SOT-523F |
It is a general purpose amplifier transistor suitable for general purpose switching & amplification applications.
The maximum junction temperature is 150 °C.