This manual provides the characteristics and usage information for the KST5086/5087 low noise PNP transistors.
This document provides the design specifications, absolute maximum ratings, and electrical characteristics for the KST5086 and KST5087 low noise transistors. The devices are available in a 3-pin SOT-23 package with specific pinouts for Base, Emitter, and Collector.
| Collector-Emitter Voltage (Vceo) | -50 V |
|---|---|
| Emitter-Base Voltage (VeEBo) | -3 Vv |
| Collector Current (Io) | -50 mA |
| Collector Power Dissipation (Po) | 350 mw |
| Storage Temperature (Tsta) | 150 °C |
| DC Current Gain (KST5086) | 150 to 500 |
| DC Current Gain (KST5087) | 250 to 800 |
| Current Gain Bandwidth Product | 40 MHz |