KST3906 is a PNP type silicon transistor produced by Fairchild company, its maximum collector-base voltage is -40V, maximum collector-emitter voltage is -40V, maximum emitter-base voltage is -5V, maximum collector current is -200mA, maximum collector power dissipation is 350mW, maximum storage temperature is 150 ℃.
This document is a datasheet for the Fairchild Semiconductor KST3906, a general-purpose PNP epitaxial silicon transistor. It provides comprehensive technical data including absolute maximum ratings, electrical characteristics, and typical performance characteristics.
| Collector-Base Voltage | -40 V |
|---|---|
| Collector-Emitter Voltage | -40 V |
| Emitter-Base Voltage | 5 V |
| Collector Current | -200 mA |
| Collector Power Dissipation | 350 mW |
| Storage Temperature | 150 °C |
| DC Current Gain (Min) | 60 |
| Current Gain Bandwidth Product | 250 MHz |
| Output Capacitance | 4.5 pF |
| Turn On Time | 70 ns |
| Turn Off Time | 300 ns |
The maximum collector current is -200 mA.
The minimum DC current gain is 60 under specified test conditions.