This document provides the absolute maximum ratings and electrical characteristics of the KST5550 NPN epitaxial silicon transistor introduced by Fairchild Semiconductor Corporation in 2002. The transistor features high voltage capability and high DC current gain.
This document provides the design specifications and electrical characteristics for the KST5550, a high voltage NPN epitaxial silicon transistor. The device is housed in a 4-pin SOT-23 package and is rated for a collector-base voltage of 160 V and a collector current of 600 mA.
| Emitter-Base Voltage | 6 V |
|---|---|
| Collector Current | 600 mA |
| Collector Power Dissipation | 350 mW |
The KST5550 is available in a 4-pin SOT-23 package.
The maximum collector current is 600 mA.