The KST5401 is a PNP type high voltage transistor produced by Fairchild Semiconductor Corporation. It has a maximum collector-base voltage of -160V, a maximum collector-emitter voltage of -150V, a maximum emitter-base voltage of -5V, a maximum collector current of -500mA and a maximum collector power dissipation of 350mW. It can operate at a storage temperature of 150℃.
The document describes the Fairchild KST5401, a high voltage PNP epitaxial silicon transistor. It lists absolute maximum ratings such as a collector-base voltage of -160V and a storage temperature up to 150°C. Key electrical characteristics include a DC current gain ranging from 50 to 240 and a current gain bandwidth product between 100 MHz and 300 MHz.
| Collector-Base Voltage (Vocbo) | -160 V |
|---|---|
| Collector-Emitter Voltage (VoEo) | -150 Vv |
| Emitter-Base Voltage (VeBo) | 5 v |
| Collector Current (lo) | -500 mA |
| Storage Temperature (Tsta) | 150 °C |
The DC current gain ranges from a minimum of 50 to a maximum of 240.
The test conditions are Io= -100A and I-=0.