KST5551 is a NPN type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 160V, maximum collector current is 600mA, and maximum power dissipation is 350mW.
This document provides a technical overview of the Fairchild KST5551, an NPN epitaxial silicon transistor designed as an amplifier. It lists absolute maximum ratings such as a collector-emitter voltage of 160V and a power dissipation of 350mW.
| Collector-Emitter Voltage (Vceo) | 160 V |
|---|---|
| Collector Power Dissipation (Pg) | 350 mW |
| Collector Current (Ic) | 600 mA |
| Junction Temperature (Tj) | 150 °C |
| DC Current Gain (hFE) Min | 80 |
| Current Gain Bandwidth Product (ft) | 100 to 300 MHz |
No, Fairchild products are not authorized for use as critical components in life support devices without express written approval.
The device is an NPN epitaxial silicon amplifier transistor.
The maximum collector power dissipation is 350 mW.
The package height ranges from 0.96 to 1.14 millimeters.