INFINEON Manuals

BCR523 is a NPN silicon digital transistor suitable for switching circuits, inverters, interface circuits, and driver circuits. It has built-in bias resistors (R1=1kΩ, R2=10kΩ).

This product is a high voltage MOS power transistor with very low RDS(on) and very low capacitance, as well as very high dv/dt capability and very low gate charge.

This document describes the features and characteristics of the BAW56 silicon switching diode released on January 13, 2006. The diode is suitable for high-speed switching applications and has a common anode configuration. Specific models include BAW56S, BAW56U, BAW56T, and BAW56W.

IPI90R500C3 CoolMOS™ Power Transistor features the lowest RON x Qg, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant, ultra low gate charge.

This file is a summary of BSS84P SIPMOS Small-Signal-Transistor products, including product features, models, maximum ratings, electrical characteristics and other information.

SPB11N60S5 is a power transistor with a maximum voltage of 600V, a resistance of 0.38 ohms, and a current of 11 amps. This product has ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and improved transconductance features.

SKW20N60 is a 600V, 20A IGBT product from Infineon, using NPT technology with a soft, fast-recovery anti-parallel EmCon diode. Compared with the previous generation, its Eoff is reduced by 75%, and its conduction loss is also lower. This product is suitable for applications such as motor controls and inverters.

IPA90R800C3 CoolMOS™ Power Transistor has the lowest figure-of-merit RON x Qg and extreme dv/dt rating, as well as high peak current capability. It is qualified according to JEDEC1) for target applications, and it is lead-free and RoHS compliant.

IDT05S60C is a second generation thinQ!TM SiC Schottky diode that features revolutionary semiconductor material - Silicon Carbide. It has benchmark switching behavior, no reverse recovery/forward recovery, no temperature influence on the switching behavior, high surge current capability, and is Pb-free and RoHS compliant. It is specially designed for fast switching applications like CCM PFC and motor drives.

SPW11N60CFD is a high voltage power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge.

BUZ 73L is an N-channel enhancement mode avalanche-rated logic level power transistor with a maximum rating of 200V, continuous current of 7A and on-resistance of 0.4 ohm.

IPI60R250CP is a CoolMOSTM power transistor that features the lowest RONxQg figure-of-merit, ultra-low gate charge, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications and is Pb-free lead plated; RoHS compliant.

PROFET® BTS612N1 is a smart two channel highside power switch with features including overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection, fast demagnetization of inductive loads, reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in OFF-state, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection.

This data sheet is for the Infineon IKW30N60T product. It includes information such as the rated voltage, rated current, switching frequency, package type, and maximum operating temperature.

SPP07N60S5 and SPI07N60S5 are Cool MOS™ power transistors with revolutionary high voltage technology, world's smallest RDS(on) in TO-220 package, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, improved transconductance.