This document describes the features and characteristics of the BAW56 silicon switching diode released on January 13, 2006. The diode is suitable for high-speed switching applications and has a common anode configuration. Specific models include BAW56S, BAW56U, BAW56T, and BAW56W.
This document presents the technical data for Infineon's BAW56 series of silicon switching diodes, including variants BAW56S, BAW56T, BAW56U, and BAW56W. It covers package types, maximum ratings, electrical characteristics, thermal resistance, and permissible pulse load limits.
The datasheet also includes package outlines, marking layouts, and legal disclaimer information, making it a comprehensive reference for designers and engineers who need detailed parameters for circuit design and reliability analysis.
| Reverse voltage (V_RRM) | 80 V |
|---|---|
| Forward current (I_F) | 200 mA |
| Storage temperature (T_STG) | -65 … 150 °C |
| Thermal resistance (junction‑to‑solder point) for BAW56 | 360 K/W |
| Diode capacitance (C_R) | 2 pF |
| Reverse recovery time (t_rr) | 4 ns |
The maximum reverse voltage is 80 V.
The diode can handle a forward current of up to 200 mA.
The diode capacitance is specified as 2 pF.
The reverse recovery time is 4 ns.