INFINEON Manuals

This is a datasheet for SIPMOS power transistors, providing detailed information about the features and characteristics of the product.

This data sheet introduces the features and specifications of the PROFET® BTS 443 P high side power switch. The switch has built-in protection functions, including reverse battery protection, short circuit protection, current limiting, overload protection, thermal shutdown, overvoltage protection (including load dump), power ground protection and power Vbb protection. The switch also has fast demagnetization and electrostatic discharge (ESD) protection. The switch is suitable for 12V and 24 V DC grounded loads and can replace electromechanical relays, fuses and discrete circuits.

The ITS 4140N is a high-side power switch manufactured by Infineon for industrial applications. It features current controlled input, short circuit protection, overload protection, overvoltage protection, switching inductive loads, negative voltage clamp on output with inductive loads, thermal shutdown with restart, ESD protection, Gnd and Vbb protection, very low standby current, reverse battery protection, and improved electromagnetic compatibility (EMC).

TDA 5201 is a single conversion receiver for wireless components

SGP30N60HS SGW30N60HS is a high-voltage IGBT from Infineon. The device is manufactured using NPT-technology and features low Eoff, short circuit withstand time and high operating frequency.

PROFET® BTS 740S2 is a dual channel high side power switch with diagnostic feedback and current sense. It features a 5.0-34V operating voltage, a 30mΩ on-state resistance and a 24A load current limit.

BSO094N03S OptiMOS®2 Power-Transistor is a fast switching MOSFET designed for switch-mode power supplies. It features optimized technology for notebook DC/DC converters and is qualified according to JEDEC standards for target applications. This N-channel logic level device has excellent gate charge x RDS(on) product (FOM) and very low on-resistance. It also has superior thermal resistance and is avalanche rated. The product is Pb-free plated and RoHS compliant.

IPP50R350CP CoolMOSTM power transistor features the lowest figure-of-merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for hard- and soft-switching SMPS topologies, CCM PFC for Lamp Ballast, LCD & PDP TV, and PWM for Lamp Ballast, LCD & PDP TV.

SPU07N60S5 and SPD07N60S5 are CoolMOS™ power transistors with a voltage of 600V and an RDS(on) of 0.6Ω. They feature world-leading RDS(on), ultra-low gate charge, extreme dv/dt ratings, ultra-low effective capacitances and improved transconductance.

IPB50R250CP CoolMOSTM Power Transistor is a low-power, high-performance power transistor with the lowest RON x Qg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant, qualified according to JEDEC 1) for target applications.

IPB60R520CP is a CoolMOSTM power transistor that features the lowest RON x Qg figure-of-merit, ultra low gate charge, extreme dv/dt rating, high peak current capability and JEDEC1) qualification for target applications, Pb-free lead plating and RoHS compliance.

IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode is a high-performance Schottky diode from IDT. It features no reverse recovery and no forward recovery, no temperature influence of the switching behavior, high surge current capability, lead-free lead plating, RoHS compliance, JEDEC1) qualification, and is designed for fast switching applications such as CCM PFC and motor drives.

This datasheet provides the characteristics parameters for SMBT3904.MMBT3904. This model is a NPN silicon switching transistor with high DC current gain, low collector-emitter saturation voltage, etc. The SMBT3904S / U type has 2 internal isolated transistors with good matching.

This document describes the features and characteristics of the SPW32N50C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.