IDT05S60C is a second generation thinQ!TM SiC Schottky diode that features revolutionary semiconductor material - Silicon Carbide. It has benchmark switching behavior, no reverse recovery/forward recovery, no temperature influence on the switching behavior, high surge current capability, and is Pb-free and RoHS compliant. It is specially designed for fast switching applications like CCM PFC and motor drives.
The IDT05S60C is a 2nd‑generation thinQ!™ SiC Schottky diode designed for fast‑switching applications such as CCM PFC and motor drives. It features no reverse or forward recovery, no temperature influence on switching, high surge current capability, and Pb‑free, RoHS‑compliant packaging.
Key electrical and thermal parameters are provided, including a continuous forward current of 5 A, a surge non‑repetitive forward current of 42 A, a reverse voltage rating of 600 V, and a typical forward voltage of 1.5 V at 5 A. The device is supplied in a PG‑TO220‑2‑2 package and operates from –55 °C to 175 °C.
| Reverse voltage rating (VRRM) | 600 V |
|---|---|
| Reverse current at 25 °C (IR) | 70 µA |
| Power dissipation (Ptot) at 25 °C | 55 W |
| Thermal resistance junction‑case (RthJC) | 2.7 K/W |
| Thermal resistance junction‑ambient (RthJA) | 62 K/W |
| Operating temperature range | -55 °C to 175 °C |
The diode is rated for a repetitive peak reverse voltage of 600 V.